STG2017 datasheet by SamHop Microelectronics.
| Part number | STG2017 |
|---|---|
| Datasheet | STG2017_SamHopMicroelectronics.pdf |
| File Size | 600.38 KB |
| Manufacturer | SamHop Microelectronics |
| Description | Dual N-Channel FET |
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S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V R ugged and reliable.
View all SamHop Microelectronics datasheets
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|---|---|
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| STG8210 | Dual N-Channel Enhancement Mode Field Effect Transistor |
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