STG8210 Datasheet | SamHop Microelectronics

.. S T G 8210 S amHop Microelectronics C orp. J un,08 2005 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.0V 28 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower...