STG8210 Overview
S T G 8210 S amHop Microelectronics C orp. J un,08 2005 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.0V 28 @ V G S = 2.5V R ugged and reliable.