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Gre r Pro
STK600
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
0.8A
R DS(ON) ( Ω) Max
0.9 @ VGS=10V 1.3 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TA=25°C TA=70°C 0.80 0.65 4.4 0.56 TA=25°C TA=70°C 1.25 0.
STK600 Datasheet
