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Green Product
STM301N
Ver1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
5.2A
R DS(ON) (m Ω) Max
48 @ VGS=10V 56 @ VGS=4.5V
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit 100 ±20 TA=25°C TA=70°C 5.2 4.2 28 156 TA=25°C TA=70°C 2.5 1.
STM301N Datasheet
