SamHop Microelectronics STM4433
P-Channel Enhancement Mode MOSFET
| Part No. | STM4433 |
|---|---|
| Datasheet | STM4433 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =-1.7A Min Typ C Max Unit -0.76 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 10 -VGS=4V 25 20 25 C 8 -ID, Drain Current (A) -ID, Drain Current (A) 125 C 15 -55 C 10 6 -VGS=10,9,8,7,6,5V 4 2 -VGS=3V 5 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), On-Resistance(Ohms) (Normalized) 900 750 Ciss 1.8 1.6 1.4 1.2 1.0 0.8 Figure 2. Transfer Characteristics VGS=-10V ID=-5.8A C, Capacitance (pF) 600 450 300 150 Crss 0 0 5 10 15 20 25 30 Coss 0.6 -55 -25 0 25 50 75 100 125 -VDS, Drain-to Source Voltage (V) Tj, Junction Temperature ( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 S...
