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S T M4437A
S amHop Microelectronics C orp. Dec 15.2004
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON)
( m W ) Max
F E AT UR E S S uper high dense cell design for low R DS (ON ).
-30V
-10A
20 @ V G S = -10V 28 @ V G S = -4.5V
R ugged and reliable. S urface Mount P ackage.
D
8
D
7
D
6
D
5
S O-8 1
1 2 3 4
S
S
S
G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 25 - 10 - 50 -1.7 2.
STM4437A Datasheet
