Datasheet Summary
S T M4439
S amHop Microelectronics C orp. S ep. 07 2004
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) Max
-15A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
8.5 @ V G S = -10V 12 @ V G S = -4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
1 2 3 4
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG...
