STM4446 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 ±20 TA=25°C TA=70°C 9 7.2 45 64 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Dec,14,2012 1 STM4446 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V 40 1 ±100 V uA nA VGS= ±20V , VDS=0V...