Datasheet Summary
S T M4472
S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0
N- Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
7A
R DS (ON) ( m ıΩ ) Max
24 @ V G S = 10V 30 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID
Limit 40 20 7 5.9 28 1.7 3 2.1 -55 to 150
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower...
