STM4633 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.0A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C IDM E AS PD TJ, TSTG -Pulsed b d Limit -30 ±20 -7 -5.6 -40 20 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Aug,13,2008 1 STM4633 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current...