Datasheet4U Logo Datasheet4U.com

STM4633 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.0A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

📥 Download Datasheet

Datasheet Details

Part number STM4633
Manufacturer SamHop Microelectronics
File Size 157.82 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM4633 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STM4639 P-Channel MOSFET VBsemi
STM4639T P-Channel 30V MOSFET VBsemi
STM400-05B RF Power Module ST Microelectronics
STM4417 P-Channel Enhancement Mode Field Effect Transistor SamHop
STM4433 P-Channel 30V MOSFET VBsemi

Other Datasheets by SamHop Microelectronics

Part Number Description
STM4635 P-Channel Enhancement Mode Field Effect Transistor
STM4637 P-Channel Enhancement Mode Field Effect Transistor
STM4639 P-Channel Enhancement Mode Field Effect Transistor
STM4639T P-Channel Enhancement Mode Field Effect Transistor
STM4605 P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STM4633 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.0A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C IDM E AS PD TJ, TSTG -Pulsed b d Limit -30 ±20 -7 -5.6 -40 20 2.5 1.