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S T M4800S
S amHop Microelectronics C orp.
J un.07 2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m Ω ) Max
ID
8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 10V 28 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tj=25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation
a
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit 30 20 8 32 1.7 2.
STM4800S Datasheet
