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STM6962 - Dual N-Channel MOSFET

Key Features

  • ( m Ω ) Max ID 6.5A RDS(ON) Super high dense cell design for low RDS(ON). 36 @ VGS = 10V 42 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2.

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Datasheet Details

Part number STM6962
Manufacturer SamHop Microelectronics
File Size 138.36 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STM6962 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product STM6962 Aug 29.2006 SamHop Microelectronics Corp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V FEATURES ( m Ω ) Max ID 6.5A RDS(ON) Super high dense cell design for low RDS(ON). 36 @ VGS = 10V 42 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a Limit 60 20 6.5 5.5 25 1.7 2 Unit V V A A A A Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range a IS PD Ta= 25 C Ta=70 C TJ, TSTG 1.