SamHop Microelectronics STM6962
Dual N-Channel MOSFET
FEATURES
( m Ω ) Max ID 6.5A RDS(ON) Super high dense cell design for low RDS(ON). 36 @ VGS = 10V 42 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a Limit 60 20 6.5 5.5 25 1.7 2 Unit V V A A A A Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range a IS PD Ta= 25 C Ta=70 C TJ, TSTG 1.44 -55 to 150 W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M6962 E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6.5A V GS =4.5V, ID= 4A V DS...