Datasheet Summary
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SamHop Microelectronics Corp.
Mar. 30 2007
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
35V
F E AT UR E S
( m Ω ) Max
12A
RDS(ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
9 @ VGS = 10V 13 @ VGS = 4.5V
SO-8...