STM8020 Overview
STM8020 SamHop Microelectronics Corp. 30 2007 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 35V F E AT UR E S ( m Ω ) Max ID 12A RDS(ON) S uper high dense cell design for low R DS (ON ). STM8020 (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ C Max Unit 0.73 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.S urface Mounted...