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STM8020
SamHop Microelectronics Corp.
Mar. 30 2007
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
35V
F E AT UR E S
( m Ω ) Max
ID
12A
RDS(ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
9 @ VGS = 10V 13 @ VGS = 4.5V
SO-8 1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C ID
Limit 35 20 12 9.6 48 1.7 2.5
Unit V V A A A A W
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C
1.
STM8020 Datasheet
