SamHop Microelectronics STM9930A
2N and 2P Channel Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 5A V GS =4.5V, ID= 3A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 5A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 29 42 20 8 550 130 60 2.3 7 8 15 6 13 6.6 1.4 3.8 3 35 54 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =5A,V GS =10V V DS =15V, ID =5A,V GS =4.5V Gate-S ource Cha...