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STP10N03 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S S TP S E R IE S TO-220 G S.

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Datasheet Details

Part number STP10N03
Manufacturer SamHop Microelectronics
File Size 99.57 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP10N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP10N03Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 120A 4.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package.