SamHop Microelectronics STP10N03
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STP10N03 |
|---|---|
| Datasheet | STP10N03 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S S TP S E R IE S TO-220 G SABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID Drain Current-Continuous b TC=25°C TC=100°C 120 76 IDM -Pulsed b EAS Single Pulse Avalanche Energy c 480 300 TC=25°C PD Maximum Power Dissipation TC=100°C 227 91 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.55 62.5 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Aug,22,2016
