STP4410 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
SamHop Microelectronics
Key Features
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D
G S
S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
D
G S.
N-Channel Enhancement Mode Field Effect Transistor
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STB4410 STP4410Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 75A 7.0 @ VGS=10V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
G S
S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
100 ±20
ID
Drain Current-Continuous c
TC=25°C TC=70°C
75 63
IDM -Pulsed a c
390
EAS Avalanche Energy d
576
TC=25°C PD Maximum Power Dissipation
TC=70°C
75 52.
STP4410 Datasheet
