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Green Product
S T S 4501
Oc t. 12,2007
S amHop Microelectronics C orp.
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON)
( m Ω ) Max
F E AT UR E S S uper high dense cell design for low R DS (ON ).
65 @ V G S = -10V -40V -3.5A 85 @ V G S = -4.5V
R ugged and reliable. S OT-23 P ackage.
D
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 40 20 -3.5 - 14 -1.25 1.