SamHop Microelectronics STS8215
Dual N-Channel MOSFET
| Part No. | STS8215 |
|---|---|
| Datasheet | STS8215 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 5.5 4.4 22 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Aug,04,2011 1 STS8215 Ver 2.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS= ±12V , VDS=0V 1 ±10 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=1mA VGS=4.5V , ID=2.75A VGS=4.0V , ID=2.75A VGS=3.7V , ID=2.75A VGS=3.1V , ID=2.
