SamHop Microelectronics STT01L07
N-Channel MOSFET
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ESD Protected. D G S G STT SERIES SOT - 223 SABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 70 ±20 TA=25°C TA=70°C 1.5 1.2 9 3.75 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Dec,19,2013 1 STT01L07 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=56V , VGS=0V 70 1 ±10 V uA uA VGS= ±20V...