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STT02N10 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G S G STT SERIES SOT - 223 S.

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Datasheet Details

Part number STT02N10
Manufacturer SamHop Microelectronics
File Size 131.31 KB
Description N-Channel MOSFET
Datasheet download datasheet STT02N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STT02N10 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2A R DS(ON) (m Ω) Typ 400 @ VGS=10V 480 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G S G STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 100 ±20 TA=25°C TA=70°C 2 1.6 13 3 TA=25°C TA=70°C 3 1.