STT03N10 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G S G STT SERIES SOT - 223 S

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 100 ±20 TA=25°C TA=70°C 2.5 2 16 9.6 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. May,19,2014 1 STT03N10 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON C...