SamHop Microelectronics STT10L01
N-Channel MOSFET
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 3A R DS(ON) (m Ω) Max 140 @ VGS=10V 225 @ VGS=4.5V D G G S STT SERIES SO T - 223 SABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 3.0 2.4 20 16 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Aug,05,2010 1 STT10L01 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V ,...