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STT10L01 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 3A R DS(ON) (m Ω) Max 140 @ VGS=10V 225 @ VGS=4.5V D G G S STT SERIES SO T - 223 S.

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Datasheet Details

Part number STT10L01
Manufacturer SamHop Microelectronics
File Size 189.23 KB
Description N-Channel MOSFET
Datasheet download datasheet STT10L01 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STT10L01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 3A R DS(ON) (m Ω) Max 140 @ VGS=10V 225 @ VGS=4.5V D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 3.0 2.4 20 16 TA=25°C TA=70°C 3 1.