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STT4660 Datasheet PDF

SamHop Microelectronics STT4660

N-Channel MOSFET

Part No. STT4660
Datasheet STT4660 Download
Manufacturer
SamHop Microelectronics
Description N-Channel MOSFET
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STT4660 datasheet page 1 preview

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 8.5A R DS(ON) (m Ω) Max 23 @ VGS=10V 36 @ VGS=4.5V D G G S STT SERIES SO T - 223 S

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 8.5 6.8 57 144 TC=25°C TC=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Dec,31,2009 1 STT4660 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V ,...
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