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STT4660 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 8.5A R DS(ON) (m Ω) Max 23 @ VGS=10V 36 @ VGS=4.5V D G G S STT SERIES SO T - 223 S.

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Datasheet Details

Part number STT4660
Manufacturer SamHop Microelectronics
File Size 192.28 KB
Description N-Channel MOSFET
Datasheet download datasheet STT4660 Datasheet

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Green Product STT4660 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 8.5A R DS(ON) (m Ω) Max 23 @ VGS=10V 36 @ VGS=4.5V D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 8.5 6.8 57 144 TC=25°C TC=70°C 3 1.