STT6603 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-223 package. ID -2.5A R DS(ON) (m Ω) Max 180 @ VGS=-10V 240 @ VGS=-4.5V D G S G SO T - 223 S

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -2.5 -2.0 -20 a Units V V A A A W W °C 2.08 1.33 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 60 °C/W Details are subject to change without notice. Nov,17,2008 1 STT6603 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Thre...