SamHop Microelectronics STU06L01
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 100 ±20 TC=25°C TC=70°C 6 4.8 17 3.6 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Oct,30,2013 1 STU06L01 STD06L01 Ver 1.1ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 100 1 ±100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drai...