SamHop Microelectronics STU102S
N-Channel MOSFET
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TC=25°C TC=70°C IDM -Pulsed c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 6 4.8 17 2 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jun,09,2014 STU102S STD102S Ver 1.0ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=25...