SamHop Microelectronics STU10N10
N-Channel MOSFET
| Part No. | STU10N10 |
|---|---|
| Datasheet | STU10N10 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK )ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 100 ±20 5 4 14 4 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jun,12,2014 STU10N10 STD10N10 Ver 1.0ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0...
