SamHop Microelectronics STU12L01
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU12L01 |
|---|---|
| Datasheet | STU12L01 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 245 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK )ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.6 35 25 TC=25°C TC=70°C 50 32 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2.5 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Oct,04,2010 1 STU12L01 Ver 1.2ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Volta...
