Datasheet4U Logo Datasheet4U.com

STU1955NL - N-Channel Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet preview – STU1955NL

Datasheet Details

Part number STU1955NL
Manufacturer SamHop Microelectronics
File Size 880.98 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STU1955NL Datasheet
Additional preview pages of the STU1955NL datasheet.

📁 Similar Datasheet

  • STU100N3LF3 - N-channel Power MOSFET (ST Microelectronics)
  • STU10N60M2 - N-CHANNEL POWER MOSFET (STMicroelectronics)
  • STU10NA50 - N-Channel Enhancement Mode Fast Power MOS Transistor (ST Microelectronics)
  • STU10NB80 - N-channel Power MOSFET (STMicroelectronics)
  • STU10NC70Z - N-Channel MOSFET (ST Microelectronics)
  • STU10NC70ZI - N-Channel MOSFET (ST Microelectronics)
  • STU10NM60N - N-Channel Power MOSFET (ST Microelectronics)
  • STU10NM60N - N-Channel MOSFET (INCHANGE)
  • STU10NM65N - N-channel Power MOSFET (STMicroelectronics)
  • STU10NM65N - N-Channel MOSFET (INCHANGE)
Other Datasheets by SamHop Microelectronics
  • STU102S - N-Channel MOSFET
  • STU1030PL - P-Channel Enhancement Mode MOSFET
  • STU10L01 - N-Channel Enhancement Mode Field Effect Transistor
  • STU10N10 - N-Channel MOSFET
  • STU10N20 - N-Channel MOSFET
  • STU10N25 - N-Channel MOSFET
  • STU1224N - N-Channel Enhancement Mode Field Effect Transistor
  • STU1225PL - P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
S amHop Microelectronics C orp. h N-C hannel ES nhancement Mode Field E ffect Transistor a t a P R ODUC T S UMMAR Y D . I V w R w w DS S D ee U 4 t m o .c S T U/D1955NL Arp,12 2005 ver1.2 F E AT UR E S DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). 55 @ V G S = 10V 80 @ V G S = 4.5V R ugged and reliable. 55V 10A TO-252 and TO-251 P ackage. D G S G D S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C w w w .
Published: |