SamHop Microelectronics STU20N03L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =20A VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 1 100 1 1.5 17 30 50 8 614 83 61 2.5 V uA nA V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS b Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 23 m ohm 39 m ohm A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b VDs =25V, VGS = 0V f = 1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd 2 VDD = 15V ID =1A VGS = 10V R L = 15 ohmRGEN = 11 ohm VDD = 15V,ID = 1A,...