SamHop Microelectronics STU2240NL
N-Channel Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 8A V DS = 5V, V GS = 10V V DS = 10V, ID =10A Min Typ C Max Unit 40 1 V uA 100 nA 1.0 1.8 25 45 20 12 840 85 70 2.5 15.2 4.8 18.6 12.1 18.7 8.9 3.9 3.1 18 5.6 22 14 22 10 4.6 3.6 950 98 82 3.0 35 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 20V ID = 1 A V GS = 4.5V R GE N = 3.3 ohm V DS =20V, ID =1...