SamHop Microelectronics STU2555NL
N-Channel Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 5V, ID = 8A Min Typ C Max Unit 55 1 V uA 100 nA 1.4 1.8 28 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 2.5 43 58 V m ohm m ohm 42 35 11 928 99 60 3 8 18 26.9 16.6 7.7 2.9 3.3 A S 1100 113 70 PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =30V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 30V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =8A,V GS =10V V DS =15V, ID =8A,V GS =4.5V...