SamHop Microelectronics STU25L01
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 25A R DS(ON) (m ) Typ 35 @ VGS=10V 45 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 100 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 25 21 73 50 35 -55 to 175 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Apr,18,2012 1 STU25L01 Ver 1.0ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Lea...