STU303S Datasheet PDF

S TU/D303S S amHop Microelectronics C orp. N ov, 16, 2007 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m Ω ) Max ID -24A R DS (ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rocteced D 28 @ V G S = -10V 40 @ V G S = -4.5V D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TU S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -24 -96 -20 50 -55 to 175 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S TU/D303S E LE CTR ICAL CHAR ACTE R IS TICS (T...