SamHop Microelectronics STU307S
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -30 ±20 -53 -42 -160 42 27 -55 to 150 Units V V A A A W W °C TC=25°C TC=70°C TC=25°C TC=70°C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 3 50 °C/W °C/W Details are subject to change without notice. Jan,29,2010 1 Downloaded from Elcodis.com electronic components distributor STU/D307S Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol BVDSS IDSS IGSS Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Cur...