SamHop Microelectronics STU35L01
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU35L01 |
|---|---|
| Datasheet | STU35L01 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK )ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 35 29.3 102 202 60 42 -55 to 175 2.5 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Oct,29,2010 STU/D35L01 Ver 2.1ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSS Drain-Source Breakdown Voltage e IDSS Zero Gate Voltage Drain...
