SamHop Microelectronics STU35N10
N-Channel MOSFET
| Part No. | STU35N10 |
|---|---|
| Datasheet | STU35N10 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 100 ±20 TC=25°C TC=70°C 35 28 102 196 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 3 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Apr,30,2014 1 STU35N10 STD35N10 Ver 1.0ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 100 1 ±100 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS IGSS Zero Gate Volta...
