SamHop Microelectronics STU404D
Dual N-Channel E nhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.8 22 30 20 20 885 1050 105 65 0.32 16 12 28 7 17 8.6 2.2 4.8 3 30 40 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =28V, ID =8A,V GS =10V V DS =28V, ID =8A,V GS =4.5V Gate-...