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S T U405D
S amHop Microelectronics C orp.
Nov,24 2005
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
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P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-40V
ID
16A
R DS (ON) ( m W )
Max
ID
-12A
R DS (ON) ( m W )
Max
30 @ V G S = 10V 40 @ V G S = 4.5V D1
48 @ V G S = -10V 65 @ V G S = -4.5V D2
40V
D1/D2
S1
G1 D1/D2 S 2 G2
G1 TO-252-5L S1 N-ch
G2 S2 P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C Tc= 70 C PD T J , T S TG
N-C hannel P-C hannel 40 20 16 13.8 50 8 11 7.