Full PDF Text Transcription for STU408D (Reference)
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STU408D. For precise diagrams, and layout, please refer to the original PDF.
S amHop Microelectronics C orp. S T U408D J uly.25 2006 www.DataSheet4U.com Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E...
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ment Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m W ) Max S uper high dense cell design for low R DS (ON ). ID 16A R DS (ON) R ugged and reliable. TO252-4L package. E S D P rotected. D1 D2 30 @ V G S = 10V 40 @ V G S =4.5V D1/D2 G1 G2 S1 G1 S2 TO-252-4L G2 S1 N-ch S2 N-ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed a S ymbol V DS V GS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD T J , T S TG Limit 40 20 16 13.8 50 8 11 7.
STU408D Datasheet
