SamHop Microelectronics STU421S
P-Channel Logic Level Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -32V, V GS= 0V V GS = 20V, V DS = 0V V DS = V GS , ID =-250uA V GS =-10V, ID= -10A V GS =-4.5V, ID = -6A V DS =-5V, V GS = -10V V DS = -10V, ID = -10A Min Typ C Max Unit -40 1 V uA 100 nA -1.0 -1.7 34 47 30 11 900 135 85 3.5 12 15 45 26 17 8 1.8 5 -3.0 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-20V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -24V ID = -10 A V GS = -10V R GE N = 3.3 ohm VDS =-24V, ID =-10A,VGS =-10V VDS =-24V, ID =-10...