SamHop Microelectronics STU435S
P-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU435S |
|---|---|
| Datasheet | STU435S Download |
| Manufacturer |  SamHop Microelectronics |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range a Limit -40 ±20 Units V V A A A mJ W W °C TC=25°C TC=70°C c -38 -30.4 -115 156 TC=25°C TC=70°C 42 27 -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jul,01,2011 1 STU/D435SELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Ver 1.0 Min -40 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero G...
