SamHop Microelectronics STU466S
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 40 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 38 30 111 42 27 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Feb,06,2013 1 STU/D466S Ver 1.0ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VG...