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STU600S Datasheet PDF

SamHop Microelectronics STU600S

N-Channel Enhancement Mode Field Effect Transistor

Part No. STU600S
Datasheet STU600S Download
Manufacturer
SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
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STU600S datasheet page 1 preview

FEATURES

( m W ) Max ID 16A RDS(ON) Super high dense cell design for low RDS(ON). 55 @ VGS = 10V 70 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S

ABSOLUTE MAXIMUM RATINGS

(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a Limit 60 20 16 10.7 30 15 50 35 -55 to 175 Unit V V A A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Ta= 25 C Ta=70 C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D600S N-Channel

ELECTRICAL CHARACTERISTICS

(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS...
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