SamHop Microelectronics STU601S
P-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU601S |
|---|---|
| Datasheet | STU601S Download |
| Manufacturer |  SamHop Microelectronics |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D - PAK )ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit -60 ±20 -15 -12 -45 36 Units V V A A A mJ W W °C TC=25°C TC=70°C d -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C 42 27 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 3 50 °C/W °C/W Details are subject to change without notice. Nov,16,2011 1 STU601S Ver 2.0ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Cur...
