Datasheet Summary
S amHop Microelectronics C orp.
S T U/D602S
Aug 26,2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
60V
F E AT UR E S
( m W ) Max
22A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
30 @ V G S = 10V 38 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a
(T A =25 C unles s otherwis e noted)
S ymbol V DS V GS Limit 60 20 22 17 60 15 50 35 -55 to 175 W C Unit V V A A A A
25 C 70 C
ID IDM IS PD T J , T S...