SamHop Microelectronics STU607S
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 60 ±20 48 38.4 140 361 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Oct,12,2015 S