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STU607S Datasheet PDF

SamHop Microelectronics STU607S

N-Channel Enhancement Mode Field Effect Transistor

Part No. STU607S
Datasheet STU607S Download
Manufacturer
SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
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STU607S datasheet page 1 preview

FEATURES

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS

(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 60 ±20 48 38.4 140 361 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Oct,12,2015 S
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