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STU618S Datasheet PDF

SamHop Microelectronics STU618S

N-Channel Enhancement Mode Field Effect Transistor

Part No. STU618S
Datasheet STU618S Download
Manufacturer
SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
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STU618S datasheet page 1 preview

FEATURES

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK )

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 60 ±20 21 16.8 60 36 60 42 -55 to 175 2.5 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Nov,0
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