SamHop Microelectronics STU660
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU660 |
|---|---|
| Datasheet | STU660 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) SABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 90 ±20 TC=25°C TC=70°C 5 4 14 4 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Apr,16,2013 1 STU/D660 Ver 2.0ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Cu...
