SamHop Microelectronics STU670S
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STU670S |
|---|---|
| Datasheet | STU670S Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 60 ±20 TC=25°C TC=70°C 36 29 110 132 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 3 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Apr,29,2014 1 STU670S STD670S Ver 1.0ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage C...
